Reversed interfacial fractionation of carbonate and bicarbonate evidenced by X-ray photoemission spectroscopy

Substrate Hybridization and Rippling of Graphene Evidenced by Near-Edge X-ray Absorption Fine Structure Spectroscopy

Interfacial interactions at graphene/metal and graphene/dielectric interfaces are likely to profoundly influence the electronic structure of graphene. We present here the first angle-resolved near-edge X-ray absorption fine structure (NEXAFS) spectroscopy studyof singleand bilayered graphene grownby chemical vapor deposition on Cu and Ni substrates. The spectra indicate the presence of new elec...

Comparison of aluminum and sodium doped poly(vinylidene fluoride-trifluoroethylene) copolymers by x-ray photoemission spectroscopy

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

Surface segregation of interstitial manganese in Ga1−xMnxAs studied by hard x-ray photoemission spectroscopy

The effects of low-temperature annealing and oxidation of the dilute magnetic semiconductor Ga1−xMnxAs are studied by photoemission spectroscopy in the hard x-ray regime HAXPES , with special attention to the depth profile of both concentration and chemical state of manganese. Annealing of Ga1−xMnxAs in air at 190 °C for up to 150 h leads to an enrichment of manganese at the surface accompanied...

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

Core-level and valence band spectra of In x Ga1-x N films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (∼20 nm), the spectra contain both surface and bulk information due to the surface band bend...